1500 watt low clamping factor transient volt age suppressor microsemi scottsdale division 8700 e. thomas rd. po box 1390, scottsdale, az 85252 usa, (480) 941-6300, fax: (480) 947-1503 page 1 copyright ? 2006 3-31-2006 revb www. microsemi . com scottsdale division 1n6373 thru 1n6389, e3 or mpte-5 thru mpte-45c, e3 1n6373 thru 1n6389, e3 mpte-5 thru mpte-45c, e3 description appearance this transient voltage suppressor (tvs) series for 1n6373 thru 1n6389 are jedec registered selections for bo th unidirectional and bidirectional devices. the 1n6373 thru 1n6381 are unidirectional and the 1n6382 thru 1n6389 are bi-directional where they all provide a very low specified clamping factor for minimal clamping voltages (v c ) above their respective breakdown voltages (v br ) as specified herein. they are most often used in protecting sensitive components from inductive switching transients or induced secondary lightning effects as found in lower surge levels of iec61000-4-5 . they are also very successful in protecting airborne avionics and electrical systems. si nce their response time is virtually instantaneous, they can also protect from esd and eft per iec61000-4-2 and iec61000-4-4. case 1 important: for the most current data, consult microsemi?s website: http://www.microsemi.com features applications / benefits ? unidirectional and bidirectional tvs series for thru-hole mounting ? suppresses transients up to 1500 watts @ 10/1000 s ? t clamping (0 volts to v (br) min): unidirectional ? less than 100 pico seconds. bidirectional ? less than 5 nano seconds. ? working voltage (v wm ) range 5 v to 45 v ? low clamping factor (ratio of actual v c /v br ): 1.33 @ full rated power and 1.20 @ 50% rated power ? economical plastic encapsulated tvs for thru-hole mount ? options for screening in accordance with mil-prf-19500 for jan, jantx, jantxv, and jans are also available by adding mq, mx, mv, msp prefixes respectively to part numbers, e.g. mx1n6373, etc. ? surface mount equivalent packages also available as smcj6373 ? smcj6389 (consult factory for other surface mount options) ? rohs compliant devices available by adding ?e3? suffix ? metal package axial-leaded equivalents available in the 1n6373 ? 1n6389 series (see separate data sheet) ? designed to protect bipolar and mos microprocessor based systems. ? protection from switching transients and induced rf ? esd & eft protection per iec 61000-4-2 and -4-4 ? secondary lightning protection per iec61000-4-5 with 42 ohms source impedance: class 1, 2 & 3 1n6356 to 1n6372 class 4: 1n6356 to 1n6362 ? secondary lightning protection per iec61000-4-5 with 12 ohms source impedance: class 1 & 2: 1n6356 to 1n6372 class 3: 1n6356 to 1n6362 class 4: 1n6356 to 1n6358 ? secondary lightning protection per iec61000-4-5 with 2 ohms source impedance: class 2: 1n6356 to 1n6361 class 3: 1n6356 to 1n6358 maximum ratings mechanical and packaging ? 1500 watts for 10/1000 s with repetition rate of 0.01% or less* at lead temperature (t l ) 25 o c (see figs. 1, 2, & 4) ? operating & storage temperatures: -65 o to +150 o c ? thermal resistance: 22 o c/w junction to lead at 3/8 inch (10 mm) from body, or 82 o c/w junction to ambient when mounted on fr4 pc board with 4 mm 2 copper pads (1oz) and track width 1 mm, length 25 mm ? steady-state power dissipation*: 5 watts at t l < 40 o c, or 1.52 watts at t a = 25 o c when mounted on fr4 pc board described for thermal resistance ? solder temperatures: 260 o c for 10 s (maximum) ? case: void-free transfer molded thermosetting epoxy body meeting ul94v-0 ? finish: tin-lead or rohs compliant annealed- matte tin plating solderable per mil-std-750 method 2026 ? polarity: cathode indicated by band ? marking: part number and polarity diode symbol ? weight: 1.5 grams. (approx) ? tape & reel option: standard per eia-296 (add ?tr? suffix to part number) ? see ?case 1? package dimension on last page * tvs devices are not typically used for dc power dissipation and are instead operated at or less than their rated standoff volta ge (v wm ) except for transients that briefly dr ive the device into avalanche breakdown (v br to v c region).
1500 watt low clamping factor transient volt age suppressor www. microsemi . com scottsdale division 1n6373 thru 1n6389, e3 or mpte-5 thru mpte-45c, e3 1n6373 thru 1n6389, e3 mpte-5 thru mpte-45c electrical characteristics @ 25 o c (unidirectional) microsemi part number stand-off voltage (note 1) v wm volts maximum reverse leakage @v wm i d a minimum* breakdown voltage @ 1.0 ma v (br) (min) volts maximum clamping voltage (fig. 2) i pp1 = 1a v c volts maximum clamping voltage (fig. 2) @ i pp2 = 10a v c volts maximum peak pulse current i pp3 a 1n6373 1n6374 1n6375 1n6376 1n6377 mpte-5 mpte-8 mpte-10 mpte-12 mpte-15 5.0 8.0 10.0 12.0 15.0 300 25 2 2 2 6.0 9.4 11.7 14.1 17.6 7.1 11.3 13.7 16.1 20.1 7.5 11.5 14.1 16.5 20.6 160 100 90 70 60 1n6378 1n6379 1n6380 1n6381 mpte-18 mpte-22 mpte-36 mpte-45 18.0 22.0 36.0 45.0 2 2 2 2 21.2 25.9 42.4 52.9 24.2 29.8 50.6 63.3 25.2 32.0 54.3 70.0 50 40 23 19 v f at 100 amps peak, 8.3 msec sine wave equals 3.5 volts maximum. electrical characteristics @ 25 o c (bidirectional) 1n6382 1n6383 1n6384 1n6385 mpte-5c mpte-8c mpte-10c mpte-12c mpte-15c 5.0 8.0 10.0 12.0 15.0 300 25 2 2 2 6.0 9.4 11.7 14.1 17.6 7.1 11.4 14.1 16.7 20.8 7.5 11.6 14.5 17.1 21.4 160 100 90 70 60 1n6386 1n6387 1n6388 1n6389 mpte-18c mpte-22c mpte-36c mpte-45c 18.0 22.0 36.0 45.0 2 2 2 2 21.2 25.9 42.4 52.9 24.8 30.8 50.6 63.3 25.5 32.0 54.3 70.0 50 40 23 19 c suffix indicates bidirectional note 1: tvs devices are normally selected a ccording to the reverse ?stand off voltage? (v wm ) which should be equal to or greater than the dc or continuous peak operating voltage level. * the minimum breakdown voltage as shown takes into consideration the + 1 volt tolerance normally specif ied for power supply regulation on most integrated circuit manufacturers data sheets. similar dev ices are available with reduced clamping voltages where tighter regulated power supply voltages are employed. graphs , e3 figure 1 figure 2 peak pulse power vs. pulse time typical characteristic clamping voltage vs. peak pulse current microsemi scottsdale division page 2 copyright ? 2006 3-31-2006 revb 8700 e. thomas rd. po box 1390, scottsdale, az 85252 usa, (480) 941-6300, fax: (480) 947-1503
1500 watt low clamping factor transient volt age suppressor www. microsemi . com scottsdale division 1n6373 thru 1n6389, e3 or mpte-5 thru mpte-45c, e3 1n6373 thru 1n6389, e3 mpte-5 thru mpte-45c, e3 pulse current (i p ) in percent of i pp peak value i pp time (t) in milliseconds figure 4 figure 3 typical capacitance vs. breakdown voltage pulse wave form for exponential surge (unidirectional types) microsemi scottsdale division page 3 copyright ? 2006 3-31-2006 revb package dimensions figure 5 typical capacitance vs. breakdo wn voltage (bidirectional types) case 1 pulse time duration (tp) is defined as that point where i p decays to 50% of peak value (i pp ). 8700 e. thomas rd. po box 1390, scottsdale, az 85252 usa, (480) 941-6300, fax: (480) 947-1503
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